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| TSM12N02 N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Drain 3. Source VDS = 20V ID = 12A RDS (on), Vgs @ 10V, Ids@8A = 30m RDS (on), Vgs @ 4.5V, Ids@6A = 40m Features Low gate charge High Density Cell Design for Ultra Low On-Resistance Advanced trench process technology Fully Characterized Avalanche Voltage and Current High performance technology for low RDS(ON) Fast switching speed Block Diagram Ordering Information Part No. TSM12N02CP Packing Tape & Reel Package TO-252 Absolute Maximum Rating (TA = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range TA = 25 C TA = 100 C o o Symbol VDS VGS ID IDM PD TJ TJ, TSTG Limit 20 12 12 30 1.3 2 +150 -55 to +150 Unit V V A W W/ C o o o C C Thermal Performance Parameter Lead Temperature (1/8" from case) Junction-to-case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: 1. Maximum DC current limited by the package 2 2. 1-in 2oz Cu PCB board Symbol TL Rjc Rja Limit 10 2.2 50 Unit S o C/W TSM12N02 1-3 2006/05 rev. A Electrical Characteristics TJ = 25 C, unless otherwise noted o Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Conditions Symbol Min Typ Max Unit VGS = 0V, ID = 250uA VGS = 10V, ID = 8A VGS = 4.5V, ID = 6A VDS = VGS, ID = 250uA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VDS =10V, ID = 6A BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS gfs 20 --0.6 --7 -21 30 ---13 -30 40 -1.0 100 -- V m m V uA nA S Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz VDD = 10V, RL = 10, ID = 1A, V GEN = 4.5V, RG = 6 VDS = 10V, ID = 6A, VGS = 4.5V Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss ----------7.1 1.96 2.94 4.9 2.6 15.7 14 620 124 95 ----------pF nS nC Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 1.7A, V GS = 0V Note: 1. pulse test: pulse width <=300uS, duty cycle <=2% 2. Negligible, Dominated by circuit inductance. IS VSD ----1.7 1.2 A V TSM12N02 2-3 2006/05 rev. A TO-252 Mechanical Drawing J AA J E E F F DIM A TO-252 DIMENSION MILLIMETERS MIN 6.570 9.250 0.550 2.560 2.300 0.490 1.460 0.520 5.340 1.460 MAX 6.840 10.400 0.700 2.670 2.390 0.570 1.580 0.570 5.550 1.640 INCHES MIN 0.259 0.364 0.022 0.101 0.090 0.019 0.057 0.020 0.210 0.057 MAX 0.269 0.409 0.028 0.105 0.094 0.022 0.062 0.022 0.219 0.065 I BB I B C D E F G DD CC H H GG H I J TSM12N02 3-3 2006/05 rev. A |
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